J583 Datasheet. Specs and Replacement
Type Designator: J583 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.675 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO22
J583 Substitution
- BJT ⓘ Cross-Reference Search
J583 datasheet
Ordering number ENN6409 P-Channel Silicon MOSFET 2SJ583LS Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2078B Micaless package facilitating mounting. [2SJ583LS] 4.5 10.0 2.8 3.2 0.9 1.2 0.7 0.75 1 2 3 1 Gate 2 Drain 3 Source 2.55 2.55 SANYO TO-220FI-LS Specifications Absolute... See More ⇒
Detailed specifications: J461, J462, J463, J464, J465, J466, J581, J582, BC337, J584, J585, J586, J587, J588, J589, J594, J596
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