All Transistors. J583 Datasheet

 

J583 Datasheet and Replacement


   Type Designator: J583
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.675 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 2 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO22

 J583 Transistor Equivalent Substitute - Cross-Reference Search

   

J583 Datasheet (PDF)

 0.1. Size:42K  sanyo
 2sj583ls.pdf pdf_icon

J583

Ordering number ENN6409 P-Channel Silicon MOSFET 2SJ583LS Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2078B Micaless package facilitating mounting. [2SJ583LS] 4.5 10.0 2.8 3.2 0.9 1.2 0.7 0.75 1 2 3 1 Gate 2 Drain 3 Source 2.55 2.55 SANYO TO-220FI-LS Specifications Absolute... See More ⇒

Datasheet: J461 , J462 , J463 , J464 , J465 , J466 , J581 , J582 , BC337 , J584 , J585 , J586 , J587 , J588 , J589 , J594 , J596 .

History: AC160 | DNLS160V | CHDTC115EKGP | MMUN2131 | TI808 | DRA2115G | AC152

Keywords - J583 transistor datasheet

 J583 cross reference
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