All Transistors. J583 Datasheet

 

J583 Datasheet and Replacement


   Type Designator: J583
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.675 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 2 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO22
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J583 Datasheet (PDF)

 0.1. Size:42K  sanyo
 2sj583ls.pdf pdf_icon

J583

Ordering number:ENN6409P-Channel Silicon MOSFET2SJ583LSUltrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance.unit:mm Ultrahigh-speed switching.2078B Micaless package facilitating mounting.[2SJ583LS]4.510.02.83.20.91.20.70.751 2 31 : Gate2 : Drain3 : Source2.55 2.55SANYO : TO-220FI-LSSpecificationsAbsolute

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: BC859W | AUY19-3 | KT8255A | AC138 | 2SD471 | 2SC4370AP | JA100

Keywords - J583 transistor datasheet

 J583 cross reference
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