All Transistors. J630 Datasheet

 

J630 Datasheet and Replacement


   Type Designator: J630
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 2 V
   Maximum Collector Current |Ic max|: 0.025 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 7 MHz
   Forward Current Transfer Ratio (hFE), MIN: 140
   Noise Figure, dB: -
   Package: TO5
 

 J630 Substitution

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J630 Datasheet (PDF)

 0.1. Size:199K  inchange semiconductor
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J630

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ6308 DESCRIPTION 700V Collector-Base Breakdown Capability Excellent Dynamic Saturation Characteristics Fast swithing Low Saturation Voltage Advanced Technology Replacement for the 2N6308 APPLICATIONSDesigned in circuits requiring good dynamio saturation characteristics in swithin

Datasheet: J596 , J623 , J624 , J625 , J626 , J627 , J628 , J629 , 2SC2073 , J631 , JA100 , JA100O , JA100P , JA100Q , JA100R , JA101 , JA101O .

History: 2SC960 | RT1N44BU

Keywords - J630 transistor datasheet

 J630 cross reference
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