All Transistors. J630 Datasheet

 

J630 Datasheet and Replacement


   Type Designator: J630
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 2 V
   Maximum Collector Current |Ic max|: 0.025 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 7 MHz
   Forward Current Transfer Ratio (hFE), MIN: 140
   Noise Figure, dB: -
   Package: TO5
 

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J630 Datasheet (PDF)

 0.1. Size:199K  inchange semiconductor
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J630

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ6308 DESCRIPTION 700V Collector-Base Breakdown Capability Excellent Dynamic Saturation Characteristics Fast swithing Low Saturation Voltage Advanced Technology Replacement for the 2N6308 APPLICATIONSDesigned in circuits requiring good dynamio saturation characteristics in swithin

Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

History: CJF31C | CMBT2369 | CJF15032 | BC806-25W

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