J630 Specs and Replacement

Type Designator: J630

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Emitter-Base Voltage |Veb|: 2 V

Maximum Collector Current |Ic max|: 0.025 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 7 MHz

Forward Current Transfer Ratio (hFE), MIN: 140

Noise Figure, dB: -

Package: TO5

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J630 datasheet

 0.1. Size:199K  inchange semiconductor

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J630

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ6308 DESCRIPTION 700V Collector-Base Breakdown Capability Excellent Dynamic Saturation Characteristics Fast swithing Low Saturation Voltage Advanced Technology Replacement for the 2N6308 APPLICATIONS Designed in circuits requiring good dynamio saturation characteristics in swithin... See More ⇒

Detailed specifications: J596, J623, J624, J625, J626, J627, J628, J629, 2SD718, J631, JA100, JA100O, JA100P, JA100Q, JA100R, JA101, JA101O

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