JA101P Datasheet and Replacement
Type Designator: JA101P
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 130 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 135
Noise Figure, dB: -
Package: TO92
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JA101P Datasheet (PDF)
ja101 3.pdf

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186JA101PNP general purpose transistor1998 Aug 04Product specificationSupersedes data of 1997 Mar 10File under Discrete Semiconductors, SC10Philips Semiconductors Product specificationPNP general purpose transistor JA101FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 base
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: 2SD1618S | 2SC5331 | RT1N130C | LDTC144WM3T5G | 2SD591 | KSE181 | 2SD294
Keywords - JA101P transistor datasheet
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History: 2SD1618S | 2SC5331 | RT1N130C | LDTC144WM3T5G | 2SD591 | KSE181 | 2SD294



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