All Transistors. 2N3854 Datasheet

 

2N3854 Datasheet and Replacement


   Type Designator: 2N3854
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 18 V
   Maximum Collector-Emitter Voltage |Vce|: 18 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 100 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 3.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 35
   Noise Figure, dB: -
   Package: TO92
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2N3854 Datasheet (PDF)

 9.1. Size:58K  fairchild semi
2n3859a.pdf pdf_icon

2N3854

2N3859ANPN General Purpose Amplifier This device designed for use as general purpose amplifier and switches requiring collector currents to 300mA. Sourced from Process 10. See PN100 for characteristics.TO-9211. Emitter 2. Collector 3. BaseNPN Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCEO C

 9.2. Size:154K  no
2n3858.pdf pdf_icon

2N3854

Datasheet: 2N3847 , 2N3848 , 2N3849 , 2N385 , 2N3850 , 2N3851 , 2N3852 , 2N3853 , TIP32C , 2N3854A , 2N3855 , 2N3855A , 2N3856 , 2N3856A , 2N3857 , 2N3858 , 2N3858A .

History: 2N249 | 2N5031 | 2SA982 | 2SC3298A | 2SA416 | DMJT9435 | 2SC497Y

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