2N3855 Datasheet and Replacement
Type Designator: 2N3855
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 18 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 100 °C
Transition Frequency (ft): 130 MHz
Collector Capacitance (Cc): 3.5 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO92
- BJT Cross-Reference Search
2N3855 Datasheet (PDF)
2n3859a.pdf

2N3859ANPN General Purpose Amplifier This device designed for use as general purpose amplifier and switches requiring collector currents to 300mA. Sourced from Process 10. See PN100 for characteristics.TO-9211. Emitter 2. Collector 3. BaseNPN Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCEO C
2n3711 2n3721 2n3827 2n3858 2n3858a 2n3859 2n3859a 2n3860 2n3877 2n3877a 2n3900 2n3900a 2n3901 2n3903 2n3904 2n3905.pdf

Datasheet: 2N3849 , 2N385 , 2N3850 , 2N3851 , 2N3852 , 2N3853 , 2N3854 , 2N3854A , 2SC2482 , 2N3855A , 2N3856 , 2N3856A , 2N3857 , 2N3858 , 2N3858A , 2N3859 , 2N3859A .
History: 2N5937 | 2N3941 | 2N2786 | 2N5871-1 | 2N2742 | 2N639A | 2N118
Keywords - 2N3855 transistor datasheet
2N3855 cross reference
2N3855 equivalent finder
2N3855 lookup
2N3855 substitution
2N3855 replacement
History: 2N5937 | 2N3941 | 2N2786 | 2N5871-1 | 2N2742 | 2N639A | 2N118



LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
2sd235 | k3502 datasheet | p0903bdg datasheet | 2sa722 | f1010e mosfet datasheet | 2sa566 | bc559 equivalent | c2075 transistor