2N3855 Datasheet. Specs and Replacement

Type Designator: 2N3855  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 18 V

Maximum Collector-Emitter Voltage |Vce|: 18 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 100 °C

Electrical Characteristics

Transition Frequency (ft): 130 MHz

Collector Capacitance (Cc): 3.5 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO92

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2N3855 datasheet

 9.1. Size:58K  fairchild semi

 2n3859a.pdf pdf_icon

2N3855

2N3859A NPN General Purpose Amplifier This device designed for use as general purpose amplifier and switches requiring collector currents to 300mA. Sourced from Process 10. See PN100 for characteristics. TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25 C unless otherwise noted Symbol Parameter Value Units VCEO C... See More ⇒

 9.2. Size:154K  no

 2n3858.pdf pdf_icon

2N3855

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 9.3. Size:1285K  sprague

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2N3855

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Detailed specifications: 2N3849, 2N385, 2N3850, 2N3851, 2N3852, 2N3853, 2N3854, 2N3854A, B647, 2N3855A, 2N3856, 2N3856A, 2N3857, 2N3858, 2N3858A, 2N3859, 2N3859A

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