2N3857 Datasheet. Specs and Replacement

Type Designator: 2N3857  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.6 W

Maximum Collector-Base Voltage |Vcb|: 45 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 20 MHz

Collector Capacitance (Cc): 10 pF

Forward Current Transfer Ratio (hFE), MIN: 45

Noise Figure, dB: -

Package: TO5

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2N3857 datasheet

 9.1. Size:58K  fairchild semi

2n3859a.pdf pdf_icon

2N3857

2N3859A NPN General Purpose Amplifier This device designed for use as general purpose amplifier and switches requiring collector currents to 300mA. Sourced from Process 10. See PN100 for characteristics. TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25 C unless otherwise noted Symbol Parameter Value Units VCEO C... See More ⇒

 9.2. Size:154K  no

2n3858.pdf pdf_icon

2N3857

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Detailed specifications: 2N3852, 2N3853, 2N3854, 2N3854A, 2N3855, 2N3855A, 2N3856, 2N3856A, BDT88, 2N3858, 2N3858A, 2N3859, 2N3859A, 2N385A, 2N386, 2N3860, 2N3860A

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