K2101B Specs and Replacement

Type Designator: K2101B

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 10 V

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 1.7IT MHz

Collector Capacitance (Cc): 1 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO50

 K2101B Substitution

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K2101B datasheet

 9.1. Size:175K  fuji

 2sk2101 01mr.pdf pdf_icon

K2101B

N-channel MOS-FET 2SK2101-01MR FAP-IIA Series 800V 2,1 6A 50W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equ... See More ⇒

 9.2. Size:162K  first silicon

 ftk2101.pdf pdf_icon

K2101B

SEMICONDUCTOR FTK2101 TECHNICAL DATA 20V P-Channel Enhancement-Mode MOSFET FEATURE 3 Leading Trench Technology for Low RDS(on) Extending Battery Life 2 1 SOT 323 APPLICATIONS High Side Load Switch Charging Circuit 3 D Single Cell Battery Applications such as Cell Phones, Digital Cameras ,PDAs, etc G 1 S 2 MARKING TS1 Maximum ratings (Ta=25 unless otherwise n... See More ⇒

Detailed specifications: JO1006, JO2015A, JO3020, JO4036, JO4045, JO4075, K2101, K2101A, BD139, K2102, K2102A, K2102B, K2103, K2103A, K2103B, K2104, K2104A

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