All Transistors. K2102B Datasheet

 

K2102B Datasheet and Replacement


   Type Designator: K2102B
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 10 V
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 1700 MHz
   Collector Capacitance (Cc): 1 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO50
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K2102B Datasheet (PDF)

 9.1. Size:144K  first silicon
 ftk2102.pdf pdf_icon

K2102B

SEMICONDUCTORFTK2102TECHNICAL DATA20V N-Channel Enhancement-Mode MOSFET FEATURE 3Leading Trench Technology for Low RDS(on) Extending Battery Life 21SOT323APPLICATIONS High Side Load Switch Charging Circuit 3 Single Cell Battery Applications such as Cell Phones, Digital Cameras ,PDAs, etc 1 2 MARKING: TS2 Maximum ratings (Ta=25 unless otherwise noted)

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SD2134 | 2SB927R | BF502S | NSS1C301E | CPH5901 | BCX50 | HSE839

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