K2102B Datasheet. Specs and Replacement

Type Designator: K2102B  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 10 V

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 1700 MHz

Collector Capacitance (Cc): 1 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO50

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K2102B datasheet

 9.1. Size:144K  first silicon

 ftk2102.pdf pdf_icon

K2102B

SEMICONDUCTOR FTK2102 TECHNICAL DATA 20V N-Channel Enhancement-Mode MOSFET FEATURE 3 Leading Trench Technology for Low RDS(on) Extending Battery Life 2 1 SOT 323 APPLICATIONS High Side Load Switch Charging Circuit 3 Single Cell Battery Applications such as Cell Phones, Digital Cameras ,PDAs, etc 1 2 MARKING TS2 Maximum ratings (Ta=25 unless otherwise noted) ... See More ⇒

Detailed specifications: JO4036, JO4045, JO4075, K2101, K2101A, K2101B, K2102, K2102A, 2N5551, K2103, K2103A, K2103B, K2104, K2104A, K2104B, K2105, K2105A

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