K2102B Datasheet, Equivalent, Cross Reference Search
Type Designator: K2102B
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 1700 MHz
Collector Capacitance (Cc): 1 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO50
K2102B Transistor Equivalent Substitute - Cross-Reference Search
K2102B Datasheet (PDF)
9.1. Size:144K first silicon
ftk2102.pdf
ftk2102.pdf
SEMICONDUCTORFTK2102TECHNICAL DATA20V N-Channel Enhancement-Mode MOSFET FEATURE 3Leading Trench Technology for Low RDS(on) Extending Battery Life 21SOT323APPLICATIONS High Side Load Switch Charging Circuit 3 Single Cell Battery Applications such as Cell Phones, Digital Cameras ,PDAs, etc 1 2 MARKING: TS2 Maximum ratings (Ta=25 unless otherwise noted)
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
