K2115B Datasheet. Specs and Replacement

Type Designator: K2115B  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 15 V

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 1700 MHz

Collector Capacitance (Cc): 1 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO72

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K2115B datasheet

 9.1. Size:33K  hitachi

2sk2114 2sk2115.pdf pdf_icon

K2115B

2SK2114, 2SK2115 Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator Outline TO-220CFM 1 D 2 3 1. Gate G 2. Drain 3. Source S 2SK2114, 2SK2115 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to so... See More ⇒

 9.2. Size:212K  inchange semiconductor

2sk2115.pdf pdf_icon

K2115B

isc N-Channel MOSFET Transistor 2SK2115 DESCRIPTION Drain Current I = 5A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS High speed power switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Suitable for Switching regulator ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Volta... See More ⇒

Detailed specifications: K2112A, K2112B, K2113A, K2113B, K2114A, K2114B, K2115, K2115A, A940, K2116A, K2116B, K2117A, K2117B, K2118, K2118A, K2118B, K2119

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