K2501 Datasheet, Equivalent, Cross Reference Search
Type Designator: K2501
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 1300 MHz
Collector Capacitance (Cc): 2 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO18
K2501 Transistor Equivalent Substitute - Cross-Reference Search
K2501 Datasheet (PDF)
r07ds0312ej rqk2501ygd.pdf
Preliminary Datasheet RQK2501YGDQA R07DS0312EJ0300(Previous: REJ03G1521-0200)Silicon N Channel MOS FET Rev.3.00Power Switching Mar 28, 2011Features High drain to source voltage and Low gate drive VDSS : 250 V and 2.5 V gate drive Low drive current High speed switching Small traditional package (MPAK) Outline RENESAS Package code: PLSP0003ZB-A(Pac
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .