All Transistors. K2501 Datasheet

 

K2501 Datasheet and Replacement


   Type Designator: K2501
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector-Emitter Voltage |Vce|: 10 V
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 1300 MHz
   Collector Capacitance (Cc): 2 pF
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO18
 

 K2501 Substitution

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K2501 Datasheet (PDF)

 0.1. Size:109K  renesas
 r07ds0312ej rqk2501ygd.pdf pdf_icon

K2501

Preliminary Datasheet RQK2501YGDQA R07DS0312EJ0300(Previous: REJ03G1521-0200)Silicon N Channel MOS FET Rev.3.00Power Switching Mar 28, 2011Features High drain to source voltage and Low gate drive VDSS : 250 V and 2.5 V gate drive Low drive current High speed switching Small traditional package (MPAK) Outline RENESAS Package code: PLSP0003ZB-A(Pac

Datasheet: K2125A , K2125B , K2126 , K2126A , K2126B , K2127 , K2127A , K2127B , 2SC2240 , K4-525 , K9015 , KC147 , KC148 , KC149 , KC307A , KC307B , KC307C .

History: KTC3571S | 2SC4852

Keywords - K2501 transistor datasheet

 K2501 cross reference
 K2501 equivalent finder
 K2501 lookup
 K2501 substitution
 K2501 replacement

 

 
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