K2501 Datasheet. Specs and Replacement
Type Designator: K2501 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 1300 MHz
Collector Capacitance (Cc): 2 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO18
K2501 Substitution
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K2501 datasheet
Preliminary Datasheet RQK2501YGDQA R07DS0312EJ0300 (Previous REJ03G1521-0200) Silicon N Channel MOS FET Rev.3.00 Power Switching Mar 28, 2011 Features High drain to source voltage and Low gate drive VDSS 250 V and 2.5 V gate drive Low drive current High speed switching Small traditional package (MPAK) Outline RENESAS Package code PLSP0003ZB-A (Pac... See More ⇒
Detailed specifications: K2125A, K2125B, K2126, K2126A, K2126B, K2127, K2127A, K2127B, 2SA1015, K4-525, K9015, KC147, KC148, KC149, KC307A, KC307B, KC307C
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