KD502 Datasheet, Equivalent, Cross Reference Search
Type Designator: KD502
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 70 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 20 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 2 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO3
KD502 Transistor Equivalent Substitute - Cross-Reference Search
KD502 Datasheet (PDF)
..1. Size:121K tesla
kd501 kd502 kd503 kd601 kd602 kd605 kd606 kd607 kd3055 kd3442 kd3772 kd3773 kd4348 kd615 kd616 kd617.pdf
kd501 kd502 kd503 kd601 kd602 kd605 kd606 kd607 kd3055 kd3442 kd3772 kd3773 kd4348 kd615 kd616 kd617.pdf
0.1. Size:601K crhj
skd502t skss055n08n.pdf
skd502t skss055n08n.pdf
SKD502T, SKSS055N08NSkyMOS1 N-MOSFET 85V, 4.6m, 120AFeatures Product SummaryVDS Uses CRM(CQ) advanced SkyMOS1 technology 85V Extremely low on-resistance RDS(on) RDS(on)4.6m Excellent QgxRDS(on) product(FOM) ID 120A Qualified according to JEDEC criteriaApplications Motor control and drive100% Avalanche Tested100% Avalanche Tested100% Avalanche Tes
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , A1015 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
