KD502 Datasheet. Specs and Replacement

Type Designator: KD502  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 150 W

Maximum Collector-Base Voltage |Vcb|: 70 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 20 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 2 MHz

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO3

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KD502 datasheet

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KD502

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 skd502t skss055n08n.pdf pdf_icon

KD502

SKD502T, SKSS055N08N SkyMOS1 N-MOSFET 85V, 4.6m , 120A Features Product Summary VDS Uses CRM(CQ) advanced SkyMOS1 technology 85V Extremely low on-resistance RDS(on) RDS(on) 4.6m Excellent QgxRDS(on) product(FOM) ID 120A Qualified according to JEDEC criteria Applications Motor control and drive 100% Avalanche Tested 100% Avalanche Tested 100% Avalanche Tes... See More ⇒

Detailed specifications: KD367A, KD367B, KD3772, KD3773, KD3773T, KD4025, KD4348, KD501, 2SA1837, KD503, KD5527, KD6001, KD601, KD602, KD605, KD606, KD607

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