KSB595 Datasheet and Replacement
Type Designator: KSB595
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO220
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KSB595 Datasheet (PDF)
ksb596.pdf

KSB596Power Amplifier Applications Complement to KSD526TO-22011.Base 2.Collector 3.EmitterPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage - 80 V VCEO Collector-Emitter Voltage - 80 V VEBO Emitter-Base Voltage - 5 V IC Collector Current(DC) - 4 AIB Base Current - 0.4 A
ksb596.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2SC410 | MRF5812 | FPS6566 | PBSS4230T | GET2905 | MCH3245 | KRA767E
Keywords - KSB595 transistor datasheet
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History: 2SC410 | MRF5812 | FPS6566 | PBSS4230T | GET2905 | MCH3245 | KRA767E



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