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KSB601R Specs and Replacement


   Type Designator: KSB601R
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 3000
   Noise Figure, dB: -
   Package: TO220

 KSB601R Transistor Equivalent Substitute - Cross-Reference Search

   

KSB601R detailed specifications

 8.1. Size:48K  fairchild semi
 ksb601.pdf pdf_icon

KSB601R

KSB601 Low Frequency Power Amplifier Medium Speed Switching Industrial Use Complement to KSD560 TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage - 100 V VCEO Collector-Emitter Voltage - 100 V VEBO Emitter-Base Voltage - 7 V IC C... See More ⇒

Detailed specifications: KSB564A , KSB564AG , KSB564AO , KSB564AY , KSB595 , KSB596 , KSB601 , KSB601O , D965 , KSB707 , KSB707O , KSB707R , KSB707Y , KSB708 , KSB708O , KSB708R , KSB708Y .

Keywords - KSB601R transistor specs

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