KSB772G Datasheet, Equivalent, Cross Reference Search
Type Designator: KSB772G
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 80 MHz
Collector Capacitance (Cc): 55 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: TO126
KSB772G Transistor Equivalent Substitute - Cross-Reference Search
KSB772G Datasheet (PDF)
ksb772.pdf
KSB772Audio Frequency Power Amplifier Low Speed Switching Complement to KSD882TO-12611. Emitter 2.Collector 3.BasePNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage - 40 V VCEO Collector-Emitter Voltage - 30 VVEBO Emitter-Base Voltage - 5 VIC Collector Current (DC) - 3
ksb772.pdf
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