KSB772G Datasheet. Specs and Replacement
Type Designator: KSB772G 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 80 MHz
Collector Capacitance (Cc): 55 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Package: TO126
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KSB772G Substitution
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KSB772G datasheet
KSB772 Audio Frequency Power Amplifier Low Speed Switching Complement to KSD882 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage - 40 V VCEO Collector-Emitter Voltage - 30 V VEBO Emitter-Base Voltage - 5 V IC Collector Current (DC) - 3... See More ⇒
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
Detailed specifications: KSB744A, KSB744AO, KSB744AR, KSB744AY, KSB744O, KSB744R, KSB744Y, KSB772, SS8050, KSB772O, KSB772R, KSB772Y, KSB794, KSB794O, KSB794R, KSB794Y, KSB795
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