KSB795 Datasheet. Specs and Replacement

Type Designator: KSB795

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 10 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 8 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 2000

Noise Figure, dB: -

Package: TO126

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KSB795 datasheet

 9.1. Size:429K  fairchild semi

 ksb798.pdf pdf_icon

KSB795

July 2005 KSB798 PNP Epitaxial Silicon Transistor Audio Frequency Power Amplifier Collector Current IC = -1A Collector Power Dissipation PC = 2W Marking 7 9 8 P Y W W SOT-89 1 Weekly code 1. Base 2. Collector 3. Emitter Year code hFE grage Absolute Maximum Ratings Ta = 25 C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage -30 V VC... See More ⇒

Detailed specifications: KSB772G, KSB772O, KSB772R, KSB772Y, KSB794, KSB794O, KSB794R, KSB794Y, BDT88, KSB795O, KSB795R, KSB795Y, KSB810, KSB810G, KSB810O, KSB810Y, KSB811

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