KSB817Y Datasheet, Equivalent, Cross Reference Search
Type Designator: KSB817Y
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 140 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 15 MHz
Collector Capacitance (Cc): 300 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO3P
KSB817Y Transistor Equivalent Substitute - Cross-Reference Search
KSB817Y Datasheet (PDF)
ksb811.pdf
KSB811Audio Frequency Power Amplifier Complement to KSD1021 Collector Current : IC= -1A Collector Power Dissipation : PC=350mWTO-92S11.Emitter 2. Collector 3. BasePNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage -30 VVCEO Collector-Emitter Voltage -25 VVEBO Emitt
ksb810.pdf
KSB810Audio Frequency Amplifier Complement to KSD1020TO-92S11.Emitter 2. Collector 3. BasePNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage -30 VVCEO Collector-Emitter Voltage -25 VVEBO Emitter-Base Voltage -5.0 VIC Collector Current (DC) -700 mAICP * Collector Current
ksb811.pdf
KSB811 PNP EPITAXIAL SILICON TRANSISTORAUDIO FREQUENCY POWER AMPLIFIERTO-92S Complement to KSD1021 Collector Current IC= -1A Collector Dissipation PC=350mWABSOLUTE MAXIMUM RATING(T =25 )ACharacteristic Symbol Rating UnitCollector-Base Voltage VCBO -30 VCollector-Emitter Voltage VCEO -25 VEmitter-Base Voltage VEBO -5 VCollector Current IC -1.0 ACollector Dissip
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
