KSB906O Datasheet, Equivalent, Cross Reference Search
Type Designator: KSB906O
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO252
KSB906O Transistor Equivalent Substitute - Cross-Reference Search
KSB906O Datasheet (PDF)
ksb906.pdf
KSB906Low Frequency Power Amplifier Low Collector- Emitter Saturation Voltage Complement to KSD12211I-PAK1. Base 2. Collector 3. EmitterPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage - 60 V VCEO Collector-Emitter Voltage - 60 V VEBO Emitter-Base Voltage - 7 V IC Col
ksb907.pdf
KSB907Power Amplifier Applications High DC Current Gain Low Collector-Emitter Saturation Voltage Built-in Damper Diode at E-C Darlington TR Complement to KSD12221I-PACK1. Base 2. Collector 3. EmitterPNP Silicon Darlington TransistorAbsolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage - 60 V V
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
