All Transistors. KSB906O Datasheet

 

KSB906O Datasheet and Replacement


   Type Designator: KSB906O
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 20 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO252
 
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KSB906O Datasheet (PDF)

 8.1. Size:66K  fairchild semi
 ksb906.pdf pdf_icon

KSB906O

KSB906Low Frequency Power Amplifier Low Collector- Emitter Saturation Voltage Complement to KSD12211I-PAK1. Base 2. Collector 3. EmitterPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage - 60 V VCEO Collector-Emitter Voltage - 60 V VEBO Emitter-Base Voltage - 7 V IC Col

 9.1. Size:54K  fairchild semi
 ksb907.pdf pdf_icon

KSB906O

KSB907Power Amplifier Applications High DC Current Gain Low Collector-Emitter Saturation Voltage Built-in Damper Diode at E-C Darlington TR Complement to KSD12221I-PACK1. Base 2. Collector 3. EmitterPNP Silicon Darlington TransistorAbsolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage - 60 V V

Datasheet: KSB811Y , KSB817 , KSB817O , KSB817Y , KSB834 , KSB834O , KSB834Y , KSB906 , 2SA1943 , KSB906Y , KSB907 , KSC1008 , KSC1008G , KSC1008R , KSC1008Y , KSC1009 , KSC1009G .

Keywords - KSB906O transistor datasheet

 KSB906O cross reference
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