KSB906O Datasheet. Specs and Replacement

Type Designator: KSB906O  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 20 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO252

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KSB906O datasheet

 8.1. Size:66K  fairchild semi

 ksb906.pdf pdf_icon

KSB906O

KSB906 Low Frequency Power Amplifier Low Collector- Emitter Saturation Voltage Complement to KSD1221 1 I-PAK 1. Base 2. Collector 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage - 60 V VCEO Collector-Emitter Voltage - 60 V VEBO Emitter-Base Voltage - 7 V IC Col... See More ⇒

 9.1. Size:54K  fairchild semi

 ksb907.pdf pdf_icon

KSB906O

KSB907 Power Amplifier Applications High DC Current Gain Low Collector-Emitter Saturation Voltage Built-in Damper Diode at E-C Darlington TR Complement to KSD1222 1 I-PACK 1. Base 2. Collector 3. Emitter PNP Silicon Darlington Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage - 60 V V... See More ⇒

Detailed specifications: KSB811Y, KSB817, KSB817O, KSB817Y, KSB834, KSB834O, KSB834Y, KSB906, TIP122, KSB906Y, KSB907, KSC1008, KSC1008G, KSC1008R, KSC1008Y, KSC1009, KSC1009G

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