KSC1983 Datasheet, Equivalent, Cross Reference Search
Type Designator: KSC1983
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 15 MHz
Forward Current Transfer Ratio (hFE), MIN: 500
Noise Figure, dB: -
Package: TO220
KSC1983 Transistor Equivalent Substitute - Cross-Reference Search
KSC1983 Datasheet (PDF)
..1. Size:66K samsung
ksc1983.pdf
ksc1983.pdf
KSC1983 NPN EPITAXIAL SILICON TRANSISTORHIGH POWER TRANSISTORTO-220ABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 6 V Collector Current IC 3 A Base Current IB 1 A Collector Dissipation ( TC=25 ) PC 30 W Junction Temperature TJ 150 1.Base 2.Collector 3.Emitter Stora
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
