All Transistors. KSC1983 Equivalents Search

 

KSC1983 Specs and Replacement


   Type Designator: KSC1983
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 15 MHz
   Forward Current Transfer Ratio (hFE), MIN: 500
   Noise Figure, dB: -
   Package: TO220

 KSC1983 Transistor Equivalent Substitute - Cross-Reference Search

   

KSC1983 detailed specifications

 ..1. Size:66K  samsung
 ksc1983.pdf pdf_icon

KSC1983

KSC1983 NPN EPITAXIAL SILICON TRANSISTOR HIGH POWER TRANSISTOR TO-220 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 6 V Collector Current IC 3 A Base Current IB 1 A Collector Dissipation ( TC=25 ) PC 30 W Junction Temperature TJ 150 1.Base 2.Collector 3.Emitter Stora... See More ⇒

Detailed specifications: KSC1845P , KSC1845V , KSC184G , KSC184L , KSC184O , KSC184R , KSC184V , KSC184Y , B647 , KSC2002 , KSC2003 , KSC2073 , KSC2223 , KSC2223O , KSC2223R , KSC2223Y , KSC2233 .

Keywords - KSC1983 transistor specs

 KSC1983 cross reference
 KSC1983 equivalent finder
 KSC1983 lookup
 KSC1983 substitution
 KSC1983 replacement

 

 
Back to Top

 


 
.