KSC1983 Datasheet. Specs and Replacement

Type Designator: KSC1983  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 15 MHz

Forward Current Transfer Ratio (hFE), MIN: 500

Noise Figure, dB: -

Package: TO220

 KSC1983 Substitution

- BJT ⓘ Cross-Reference Search

 

KSC1983 datasheet

 ..1. Size:66K  samsung

 ksc1983.pdf pdf_icon

KSC1983

KSC1983 NPN EPITAXIAL SILICON TRANSISTOR HIGH POWER TRANSISTOR TO-220 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 6 V Collector Current IC 3 A Base Current IB 1 A Collector Dissipation ( TC=25 ) PC 30 W Junction Temperature TJ 150 1.Base 2.Collector 3.Emitter Stora... See More ⇒

Detailed specifications: KSC1845P, KSC1845V, KSC184G, KSC184L, KSC184O, KSC184R, KSC184V, KSC184Y, B647, KSC2002, KSC2003, KSC2073, KSC2223, KSC2223O, KSC2223R, KSC2223Y, KSC2233

Keywords - KSC1983 pdf specs

 KSC1983 cross reference

 KSC1983 equivalent finder

 KSC1983 pdf lookup

 KSC1983 substitution

 KSC1983 replacement