All Transistors. KSC2982D Datasheet

 

KSC2982D Datasheet and Replacement


   Type Designator: KSC2982D
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 27 pF
   Forward Current Transfer Ratio (hFE), MIN: 420
   Noise Figure, dB: -
   Package: SOT89
 

 KSC2982D Substitution

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KSC2982D Datasheet (PDF)

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KSC2982D

July 2005KSC2982NPN Epitaxial Silicon TransistorStrobe Flash & Medium Power Amplifier Excellent hFE Linearity : hFE1=140 ~ 600 Low Collector-Emitter Saturation Voltage : VCE(sat)=0.5V Collector Dissipation : PC=1~2W in Mounted on Ceramic BoardMarking2 9 8 2P Y W WSOT-891Weekly code1. Base 2. Collector 3. EmitterYear codehFE grageAbsolute Maximum Ratings

Datasheet: KSC2881O , KSC2881Y , KSC2883O , KSC2883Y , KSC2982 , KSC2982A , KSC2982B , KSC2982C , BC546 , KSC3073 , KSC3073O , KSC3073Y , KSC3074 , KSC3074O , KSC3074Y , KSC3076 , KSC3076O .

History: ADY30

Keywords - KSC2982D transistor datasheet

 KSC2982D cross reference
 KSC2982D equivalent finder
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