2N396 Specs and Replacement
Type Designator: 2N396
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Emitter-Base Voltage |Veb|: 20 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 100 °C
Electrical Characteristics
Transition Frequency (ft): 4 MHz
Collector Capacitance (Cc): 24 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO5
2N396 Substitution
- BJT ⓘ Cross-Reference Search
2N396 datasheet
2N3964DCSM Dimensions in mm (inches). Dual Bipolar PNP Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.15 2.29 0.20 1.65 0.13 (0.055 0.006) (0.09 0.008) (0.065 0.005) Applications 2 3 1 4 Dual Bipolar PNP Devices. A 0.23 6 5 rad. (0.009) V = 45V CEO 6.22 0.13 A = 1.27 0.13 I = 0.2A C (0.0... See More ⇒
Data Sheet No. 2N3960 Generic Part Number Type 2N3960 2N3960 Geometry 0003 Polarity NPN REF MIL-PRF-19500/399 Qual Level JAN - JANTXV Features General-purpose low-power NPN silicon transistor. Housed in TO-18 case. Also available in chip form using the 0003 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/399 which Semicoa meets in all cases.... See More ⇒
Detailed specifications: 2N3946, 2N3947, 2N3948, 2N394A, 2N395, 2N3950, 2N3953, 2N3959, D882P, 2N3960, 2N3960UB, 2N3961, 2N3962, 2N3962CSM, 2N3963, 2N3963CSM, 2N3964
Keywords - 2N396 pdf specs
2N396 cross reference
2N396 equivalent finder
2N396 pdf lookup
2N396 substitution
2N396 replacement
