All Transistors. KSC815G Datasheet

 

KSC815G Datasheet and Replacement


   Type Designator: KSC815G
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.4 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 4 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: TO92
 

 KSC815G Substitution

   - BJT ⓘ Cross-Reference Search

   

KSC815G Datasheet (PDF)

 8.1. Size:38K  fairchild semi
 ksc815.pdf pdf_icon

KSC815G

KSC815Low Frequency Amplifier & High Frequency Oscillator Collector-Base Voltage : VCBO=60V Complement to KSA539 Suffix -C means Center Collector (1. Emitter 2. Collector 3. Base)TO-9211. Emitter 2. Base 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Volta

Datasheet: KSC5328 , KSC5337 , KSC5337F , KSC5338 , KSC5338F , KSC5367 , KSC5367F , KSC815 , SS8050 , KSC815O , KSC815R , KSC815Y , KSC838 , KSC838O , KSC838R , KSC838Y , KSC839 .

Keywords - KSC815G transistor datasheet

 KSC815G cross reference
 KSC815G equivalent finder
 KSC815G lookup
 KSC815G substitution
 KSC815G replacement

 

 
Back to Top

 


 
.