KSC815G Specs and Replacement
Type Designator: KSC815G
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Package: TO92
KSC815G Substitution
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KSC815G datasheet
KSC815 Low Frequency Amplifier & High Frequency Oscillator Collector-Base Voltage VCBO=60V Complement to KSA539 Suffix -C means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Volta... See More ⇒
Detailed specifications: KSC5328, KSC5337, KSC5337F, KSC5338, KSC5338F, KSC5367, KSC5367F, KSC815, 2222A, KSC815O, KSC815R, KSC815Y, KSC838, KSC838O, KSC838R, KSC838Y, KSC839
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