KSC900 Datasheet and Replacement
Type Designator: KSC900
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: TO92
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KSC900 Datasheet (PDF)
ksc900.pdf

KSC900Low Frequency & Low Noise Amplifier Collector-Base Voltage : VCBO=30V Low Noise Level : NL=50mV (MAX) Suffix -C means Center Collector (1. Emitter 2. Collector 3. Base)TO-9211. Emitter 2. Base 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage 30 V
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: MUN5115 | 2SC1431 | KRA558E | 2SC82 | 2SB1271S | RN1102MFV | CMST5087
Keywords - KSC900 transistor datasheet
KSC900 cross reference
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History: MUN5115 | 2SC1431 | KRA558E | 2SC82 | 2SB1271S | RN1102MFV | CMST5087



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