All Transistors. KSC900 Datasheet

 

KSC900 Datasheet and Replacement


   Type Designator: KSC900
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.25 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: TO92

 KSC900 Transistor Equivalent Substitute - Cross-Reference Search

   

KSC900 Datasheet (PDF)

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KSC900

KSC900 Low Frequency & Low Noise Amplifier Collector-Base Voltage VCBO=30V Low Noise Level NL=50mV (MAX) Suffix -C means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V... See More ⇒

Datasheet: KSC838R , KSC838Y , KSC839 , KSC839G , KSC839O , KSC839R , KSC839Y , KSC853 , TIP142 , KSC900G , KSC900L , KSC900V , KSC900Y , KSC921 , KSC945 , KSC945G , KSC945L .

History: ECG101 | 2SC5828

Keywords - KSC900 transistor datasheet

 KSC900 cross reference
 KSC900 equivalent finder
 KSC900 lookup
 KSC900 substitution
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