KSC900G Specs and Replacement

Type Designator: KSC900G

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.25 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: TO92

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KSC900G datasheet

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KSC900G

KSC900 Low Frequency & Low Noise Amplifier Collector-Base Voltage VCBO=30V Low Noise Level NL=50mV (MAX) Suffix -C means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V... See More ⇒

Detailed specifications: KSC838Y, KSC839, KSC839G, KSC839O, KSC839R, KSC839Y, KSC853, KSC900, 2N2907, KSC900L, KSC900V, KSC900Y, KSC921, KSC945, KSC945G, KSC945L, KSC945O

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