All Transistors. KSC900G Datasheet

 

KSC900G Datasheet and Replacement


   Type Designator: KSC900G
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.25 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: TO92
 
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KSC900G Datasheet (PDF)

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KSC900G

KSC900Low Frequency & Low Noise Amplifier Collector-Base Voltage : VCBO=30V Low Noise Level : NL=50mV (MAX) Suffix -C means Center Collector (1. Emitter 2. Collector 3. Base)TO-9211. Emitter 2. Base 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage 30 V

Datasheet: KSC838Y , KSC839 , KSC839G , KSC839O , KSC839R , KSC839Y , KSC853 , KSC900 , 2SC2482 , KSC900L , KSC900V , KSC900Y , KSC921 , KSC945 , KSC945G , KSC945L , KSC945O .

History: 2SC5703 | ST1527 | FMB2222A | 2SC1144

Keywords - KSC900G transistor datasheet

 KSC900G cross reference
 KSC900G equivalent finder
 KSC900G lookup
 KSC900G substitution
 KSC900G replacement

 

 
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