All Transistors. KSC900G Datasheet

 

KSC900G Datasheet and Replacement


   Type Designator: KSC900G
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.25 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: TO92
      - BJT Cross-Reference Search

   

KSC900G Datasheet (PDF)

 8.1. Size:40K  fairchild semi
 ksc900.pdf pdf_icon

KSC900G

KSC900Low Frequency & Low Noise Amplifier Collector-Base Voltage : VCBO=30V Low Noise Level : NL=50mV (MAX) Suffix -C means Center Collector (1. Emitter 2. Collector 3. Base)TO-9211. Emitter 2. Base 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage 30 V

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: AUY19-3 | KT8255A | BC859W | 2SC4370AP | 2SD471 | JA100 | AC138

Keywords - KSC900G transistor datasheet

 KSC900G cross reference
 KSC900G equivalent finder
 KSC900G lookup
 KSC900G substitution
 KSC900G replacement

 

 
Back to Top

 


 
.