KSD1589 Datasheet, Equivalent, Cross Reference Search
Type Designator: KSD1589
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 8000
Noise Figure, dB: -
Package: TO220
KSD1589 Transistor Equivalent Substitute - Cross-Reference Search
KSD1589 Datasheet (PDF)
ksd1589.pdf
KSD1589Low Frequency Power AmplifierLow Speed Switching Industrial Use Complement to KSB1098TO-220F11.Base 2.Collector 3.EmitterNPN Silicon Darlington TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units Equivalent CircuitC VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V
ksd1588.pdf
KSD1588Low Frequency Power Amplifier Low Speed Switching Complement to KSB1097TO-220F11.Base 2.Collector 3.EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 VIC Collector Current (DC) 7 AICP
ksd1588.pdf
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Datasheet: HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , 2222A , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .