All Transistors. KSD1621T Datasheet

 

KSD1621T Datasheet and Replacement


   Type Designator: KSD1621T
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 19 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: SOT89
 

 KSD1621T Substitution

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KSD1621T Datasheet (PDF)

 7.1. Size:115K  fairchild semi
ksd1621.pdf pdf_icon

KSD1621T

August 2009KSD1621NPN Epitaxial Silicon TransistorFeatures High Current Driver Applications Low Collector-Emitter Saturation Voltage Large Current Capacity and Wide SOA Fast Switching Speed Complement to KSB1121Marking1 6 2 1P Y W WSOT-891Weekly code1. Base 2. Collector 3. EmitterYear codehFE gradeAbsolute Maximum Ratings TA = 25C unless othe

 9.1. Size:47K  fairchild semi
ksd1691.pdf pdf_icon

KSD1621T

KSD1691Feature Low Collector-Emtter Saturation Voltage & Large Collector Current High Power Dissipation: PC = 1.3W (Ta=25C) Complementary to KSB1151TO-12611. Emitter 2.Collector 3.BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Volta

 9.2. Size:242K  fairchild semi
ksd1616a.pdf pdf_icon

KSD1621T

November 2007KSD1616/1616AAudio Frequency Power Amplifier & Medium Speed Switching Complement to KSB1116/1116ATO-9211. Emitter 2. Collector 3. BaseAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage : KSD1616 60 V: KSD1616A 120 VVCEO Collector-Emitter Voltage : KSD1616 50 V: KSD1616A 60 VVEBO Emitter-Bas

 9.3. Size:54K  fairchild semi
ksd1616.pdf pdf_icon

KSD1621T

KSD1616/1616AAudio Frequency Power Amplifier & Medium Speed Switching Complement to KSB1116/1116ATO-9211. Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage : KSD1616 60 V : KSD1616A 120 VVCEO Collector-Emitter Voltage : KSD1616 50 V : KSD1616A

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: ASY58 | 2SC191 | 2N1132CSM | 2SC1959M | TP4356 | ASY51 | NA21ZH

Keywords - KSD1621T transistor datasheet

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