KSD1943 Datasheet. Specs and Replacement

Type Designator: KSD1943  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 40 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 8 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 400

Noise Figure, dB: -

Package: TO220

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KSD1943 datasheet

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KSD1943

KSD1944 High Gain Power Transistor TO-220F 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 8 V IC Collector Current 3 A PC Collector Current (TC=25 C) 30 W TJ Junction Temperature 15... See More ⇒

Detailed specifications: KSD1691O, KSD1691Q, KSD1691Y, KSD1692, KSD1692G, KSD1692O, KSD1692Y, KSD1693, 9014, KSD1944, KSD2012, KSD2012G, KSD2012Y, KSD2058, KSD227, KSD227G, KSD227O

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