All Transistors. KSD1944 Datasheet

 

KSD1944 Datasheet and Replacement


   Type Designator: KSD1944
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 8 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 400
   Noise Figure, dB: -
   Package: TO220F
 
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KSD1944 Datasheet (PDF)

 ..1. Size:43K  fairchild semi
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KSD1944

KSD1944High Gain Power TransistorTO-220F11.Base 2.Collector 3.EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 8 VIC Collector Current 3 APC Collector Current (TC=25C) 30 W TJ Junction Temperature 15

Datasheet: KSD1691Q , KSD1691Y , KSD1692 , KSD1692G , KSD1692O , KSD1692Y , KSD1693 , KSD1943 , TIP127 , KSD2012 , KSD2012G , KSD2012Y , KSD2058 , KSD227 , KSD227G , KSD227O , KSD227Y .

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