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KSD1944 Specs and Replacement


   Type Designator: KSD1944
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 8 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 400
   Noise Figure, dB: -
   Package: TO220F
 

 KSD1944 Substitution

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KSD1944 detailed specifications

 ..1. Size:43K  fairchild semi
 ksd1944.pdf pdf_icon

KSD1944

KSD1944 High Gain Power Transistor TO-220F 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 8 V IC Collector Current 3 A PC Collector Current (TC=25 C) 30 W TJ Junction Temperature 15... See More ⇒

Detailed specifications: KSD1691Q , KSD1691Y , KSD1692 , KSD1692G , KSD1692O , KSD1692Y , KSD1693 , KSD1943 , TIP42 , KSD2012 , KSD2012G , KSD2012Y , KSD2058 , KSD227 , KSD227G , KSD227O , KSD227Y .

History: KSD1692G | KSD1692Y

Keywords - KSD1944 transistor specs

 KSD1944 cross reference
 KSD1944 equivalent finder
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