KSD2012Y Specs and Replacement
Type Designator: KSD2012Y
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 9 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO220
KSD2012Y Substitution
KSD2012Y detailed specifications
ksd2012.pdf
KSD2012 Low Frequency Power Amplifier Complement to KSB1366 TO-220F 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current 3 A IB Base Current 0.3 A PC Collector... See More ⇒
ksd2058.pdf
KSD2058 Low Frequency Power Amplifier TO-220F 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current 3 A IB Base Current 0.5 A PC Collector Dissipation (Ta=25 C) 1.5... See More ⇒
ksd2058.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors KSD2058 DESCRIPTION With TO-220F package Complement to type KSB1366 APPLICATIONS With general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS MAX UNIT VCBO... See More ⇒
Detailed specifications: KSD1692G , KSD1692O , KSD1692Y , KSD1693 , KSD1943 , KSD1944 , KSD2012 , KSD2012G , A1013 , KSD2058 , KSD227 , KSD227G , KSD227O , KSD227Y , KSD261 , KSD261G , KSD261O .
Keywords - KSD2012Y transistor specs
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