KSD227G Datasheet. Specs and Replacement

Type Designator: KSD227G  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.4 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: TO92

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KSD227G datasheet

 8.1. Size:40K  fairchild semi

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KSD227G

KSD227 Low Frequency Power Amplifier Complement to KSA642 Collector Power Dissipation PC=400mW TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Curre... See More ⇒

Detailed specifications: KSD1693, KSD1943, KSD1944, KSD2012, KSD2012G, KSD2012Y, KSD2058, KSD227, 2SC2655, KSD227O, KSD227Y, KSD261, KSD261G, KSD261O, KSD261R, KSD261Y, KSD288

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