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KSD227G Specs and Replacement


   Type Designator: KSD227G
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.4 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: TO92
 

 KSD227G Substitution

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KSD227G detailed specifications

 8.1. Size:40K  fairchild semi
 ksd227.pdf pdf_icon

KSD227G

KSD227 Low Frequency Power Amplifier Complement to KSA642 Collector Power Dissipation PC=400mW TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Curre... See More ⇒

Detailed specifications: KSD1693 , KSD1943 , KSD1944 , KSD2012 , KSD2012G , KSD2012Y , KSD2058 , KSD227 , 2SC2655 , KSD227O , KSD227Y , KSD261 , KSD261G , KSD261O , KSD261R , KSD261Y , KSD288 .

Keywords - KSD227G transistor specs

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