All Transistors. KSD261G Datasheet

 

KSD261G Datasheet and Replacement


   Type Designator: KSD261G
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: TO92
 

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KSD261G Datasheet (PDF)

 8.1. Size:39K  fairchild semi
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KSD261G

KSD261Low Frequency Power Amplifier Complement to KSA643 Collector Power Dissipation : PC=500mW Suffix -C means Center Collector (1. Emitter 2. Collector 3. Base)TO-9211. Emitter 2. Base 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage 40 VVCEO Col

Datasheet: KSD2012G , KSD2012Y , KSD2058 , KSD227 , KSD227G , KSD227O , KSD227Y , KSD261 , D880 , KSD261O , KSD261R , KSD261Y , KSD288 , KSD288O , KSD288R , KSD288Y , KSD362 .

Keywords - KSD261G transistor datasheet

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