KSD261G Datasheet. Specs and Replacement

Type Designator: KSD261G  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.5 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: TO92

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KSD261G datasheet

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KSD261G

KSD261 Low Frequency Power Amplifier Complement to KSA643 Collector Power Dissipation PC=500mW Suffix -C means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage 40 V VCEO Col... See More ⇒

Detailed specifications: KSD2012G, KSD2012Y, KSD2058, KSD227, KSD227G, KSD227O, KSD227Y, KSD261, 2N4401, KSD261O, KSD261R, KSD261Y, KSD288, KSD288O, KSD288R, KSD288Y, KSD362

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