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KSD261G PDF Specs and Replacement


   Type Designator: KSD261G
   Material of Transistor: Si
   Polarity: NPN

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics


   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: TO92
 

 KSD261G Substitution

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KSD261G PDF detailed specifications

 8.1. Size:39K  fairchild semi
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KSD261G

KSD261 Low Frequency Power Amplifier Complement to KSA643 Collector Power Dissipation PC=500mW Suffix -C means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage 40 V VCEO Col... See More ⇒

Detailed specifications: KSD2012G , KSD2012Y , KSD2058 , KSD227 , KSD227G , KSD227O , KSD227Y , KSD261 , 2N4401 , KSD261O , KSD261R , KSD261Y , KSD288 , KSD288O , KSD288R , KSD288Y , KSD362 .

History: PMBT3904M | NB012HZ | 2N2854-2 | BC557VI

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