KSD288O Datasheet. Specs and Replacement

Type Designator: KSD288O  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 25 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 55 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 70

Noise Figure, dB: -

Package: TO220

  📄📄 Copy 

 KSD288O Substitution

- BJT ⓘ Cross-Reference Search

 

KSD288O datasheet

 8.1. Size:42K  fairchild semi

 ksd288.pdf pdf_icon

KSD288O

KSD288 Power Regulator Low Frequency High Power Amplifier Collector-Base Voltage VCBO=80V Collector Dissipation PC=25W(TC=25 C) TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 55 V VEBO Emitter-... See More ⇒

Detailed specifications: KSD227O, KSD227Y, KSD261, KSD261G, KSD261O, KSD261R, KSD261Y, KSD288, 2SD669A, KSD288R, KSD288Y, KSD362, KSD362N, KSD362O, KSD362R, KSD363, KSD363O

Keywords - KSD288O pdf specs

 KSD288O cross reference

 KSD288O equivalent finder

 KSD288O pdf lookup

 KSD288O substitution

 KSD288O replacement