KSD560Y Specs and Replacement
Type Designator: KSD560Y
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 10000
Noise Figure, dB: -
Package: TO220
KSD560Y Transistor Equivalent Substitute - Cross-Reference Search
KSD560Y detailed specifications
ksd560.pdf
KSD560 Low Frequency Power Amplifier Low Speed Switching Industrial Use Complement to KSB601 TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collect... See More ⇒
ksd560.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
ksd560.pdf
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor KSD560 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) High DC Current Gain h = 2000(Min) @I = 3.0A FE C Low Saturation Voltage Complement to Type KSB601 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequenc... See More ⇒
Detailed specifications: KSD5090 , KSD526 , KSD526O , KSD526R , KSD526Y , KSD560 , KSD560O , KSD560R , 2SA1837 , KSD568 , KSD568O , KSD568R , KSD568Y , KSD569 , KSD569O , KSD569R , KSD569Y .
History: KSD5742
Keywords - KSD560Y transistor specs
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History: KSD5742
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