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KSD5740 Specs and Replacement


   Type Designator: KSD5740
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 80 W
   Maximum Collector-Emitter Voltage |Vce|: 300 V
   Maximum Emitter-Base Voltage |Veb|: 8 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: TO220

 KSD5740 Transistor Equivalent Substitute - Cross-Reference Search

   

KSD5740 detailed specifications

 9.1. Size:62K  njs
 ksd5703.pdf pdf_icon

KSD5740

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 9.2. Size:83K  samsung
 ksd5702.pdf pdf_icon

KSD5740

NPN TRIPLE DIFFUSED KSD5702 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT TO-3PF APPLICATION (DAMPER DIODE BUILT IN) High Collector-Base Voltage (VCBO=1500V) High Switching Speed (tf. max=0.4uS) ABSOLUTE MIXIMUM RATING Characteristic Symbol Rating Unit Collector Base Voltage VCBO 1500 V Collector Emitter Voltage VCEO 800 V Emitter Base Voltage VEBO 6 V Collector ... See More ⇒

Detailed specifications: KSD568 , KSD568O , KSD568R , KSD568Y , KSD569 , KSD569O , KSD569R , KSD569Y , 2SD2499 , KSD5741 , KSD5742 , KSD73 , KSD73O , KSD73Y , KSD794 , KSD794A , KSD794AO .

Keywords - KSD5740 transistor specs

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