KSD5741 Datasheet, Equivalent, Cross Reference Search
Type Designator: KSD5741
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Emitter Voltage |Vce|: 350 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: TO220
KSD5741 Transistor Equivalent Substitute - Cross-Reference Search
KSD5741 Datasheet (PDF)
9.2. Size:83K samsung
ksd5702.pdf
ksd5702.pdf
NPN TRIPLE DIFFUSEDKSD5702 PLANAR SILICON TRANSISTORCOLOR TV HORIZONTAL OUTPUTTO-3PFAPPLICATION (DAMPER DIODE BUILT IN) High Collector-Base Voltage (VCBO=1500V) High Switching Speed (tf. max=0.4uS)ABSOLUTE MIXIMUM RATINGCharacteristic Symbol Rating Unit Collector Base Voltage VCBO 1500 V Collector Emitter Voltage VCEO 800 V Emitter Base Voltage VEBO 6 V Collector
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , TIP31 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
