KSD880G Datasheet. Specs and Replacement

Type Designator: KSD880G  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Collector Capacitance (Cc): 70 pF

Forward Current Transfer Ratio (hFE), MIN: 150

Noise Figure, dB: -

Package: TO220

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KSD880G datasheet

 8.1. Size:59K  fairchild semi

 ksd880.pdf pdf_icon

KSD880G

KSD880 Low Frequency Power Amplifier Complement to KSB834 TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current 3 A IB Base Current 0.3 A PC Collector ... See More ⇒

 8.2. Size:176K  onsemi

 ksd880.pdf pdf_icon

KSD880G

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 8.3. Size:209K  inchange semiconductor

 ksd880w.pdf pdf_icon

KSD880G

isc Silicon NPN Power Transistor KSD880W DESCRIPTION Complement to KSB834W 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Low frequency power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 60 V CEO V Emitter-Base ... See More ⇒

 8.4. Size:216K  inchange semiconductor

 ksd880.pdf pdf_icon

KSD880G

isc Silicon NPN Power Transistor KSD880 DESCRIPTION Collector-Emitter sustaining Voltage V =60V(Min) CEO Good Linearity of h FE Complement to KSB834 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Linear and switching industrial applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Bas... See More ⇒

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Detailed specifications: KSD794A, KSD794AO, KSD794AR, KSD794AY, KSD794O, KSD794R, KSD794Y, KSD880, 2N4401, KSD880O, KSD880Y, KSD882, KSD882G, KSD882O, KSD882R, KSD882Y, KSD985

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