All Transistors. KSD985 Datasheet

 

KSD985 Datasheet and Replacement


   Type Designator: KSD985
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 150 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 8 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 8000
   Noise Figure, dB: -
   Package: TO126
 

 KSD985 Substitution

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KSD985 Datasheet (PDF)

 ..1. Size:50K  fairchild semi
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KSD985

KSD985/986Low Frequency Power Amplifier Low Speed Switching Industrial UseTO-12611. Emitter 2.Collector 3.BaseNPN Epitaxial Silicon Darlington TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Volage : KSD985 60 V: KSD986 80 V VEBO Emitter-Base Voltage 8.0 V IC C

Datasheet: KSD880G , KSD880O , KSD880Y , KSD882 , KSD882G , KSD882O , KSD882R , KSD882Y , D882P , KSD985O , KSD985R , KSD985Y , KSD986 , KSD986O , KSD986R , KSD986Y , KSE13003 .

Keywords - KSD985 transistor datasheet

 KSD985 cross reference
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