KSD985 Specs and Replacement
Type Designator: KSD985
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 8000
Noise Figure, dB: -
Package: TO126
KSD985 Transistor Equivalent Substitute - Cross-Reference Search
KSD985 detailed specifications
ksd985.pdf
KSD985/986 Low Frequency Power Amplifier Low Speed Switching Industrial Use TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Volage KSD985 60 V KSD986 80 V VEBO Emitter-Base Voltage 8.0 V IC C... See More ⇒
Detailed specifications: KSD880G , KSD880O , KSD880Y , KSD882 , KSD882G , KSD882O , KSD882R , KSD882Y , 2SC2240 , KSD985O , KSD985R , KSD985Y , KSD986 , KSD986O , KSD986R , KSD986Y , KSE13003 .
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