KSD985 Datasheet and Replacement
Type Designator: KSD985
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 8000
Noise Figure, dB: -
Package: TO126
KSD985 Substitution
KSD985 Datasheet (PDF)
ksd985.pdf

KSD985/986Low Frequency Power Amplifier Low Speed Switching Industrial UseTO-12611. Emitter 2.Collector 3.BaseNPN Epitaxial Silicon Darlington TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Volage : KSD985 60 V: KSD986 80 V VEBO Emitter-Base Voltage 8.0 V IC C
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: RN2102FS | NB022HK | 2SC1812 | SXT3906 | NA31LY | RN1963FS | B631K
Keywords - KSD985 transistor datasheet
KSD985 cross reference
KSD985 equivalent finder
KSD985 lookup
KSD985 substitution
KSD985 replacement
History: RN2102FS | NB022HK | 2SC1812 | SXT3906 | NA31LY | RN1963FS | B631K



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