KSD985 Datasheet. Specs and Replacement
Type Designator: KSD985 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 8000
Package: TO126
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KSD985 datasheet
KSD985/986 Low Frequency Power Amplifier Low Speed Switching Industrial Use TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Volage KSD985 60 V KSD986 80 V VEBO Emitter-Base Voltage 8.0 V IC C... See More ⇒
Detailed specifications: KSD880G, KSD880O, KSD880Y, KSD882, KSD882G, KSD882O, KSD882R, KSD882Y, 2SC2240, KSD985O, KSD985R, KSD985Y, KSD986, KSD986O, KSD986R, KSD986Y, KSE13003
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