KSD986 Specs and Replacement

Type Designator: KSD986

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 10 W

Maximum Collector-Base Voltage |Vcb|: 150 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 8 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 8000

Noise Figure, dB: -

Package: TO126

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KSD986 datasheet

 9.1. Size:50K  fairchild semi

 ksd985.pdf pdf_icon

KSD986

KSD985/986 Low Frequency Power Amplifier Low Speed Switching Industrial Use TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Volage KSD985 60 V KSD986 80 V VEBO Emitter-Base Voltage 8.0 V IC C... See More ⇒

Detailed specifications: KSD882G, KSD882O, KSD882R, KSD882Y, KSD985, KSD985O, KSD985R, KSD985Y, 2SD669, KSD986O, KSD986R, KSD986Y, KSE13003, KSE13004, KSE13005, KSE13005F, KSE13006

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