KSE200 Datasheet. Specs and Replacement

Type Designator: KSE200  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 15 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 8 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 65 MHz

Collector Capacitance (Cc): 80 pF

Forward Current Transfer Ratio (hFE), MIN: 45

Noise Figure, dB: -

Package: TO126

 KSE200 Substitution

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KSE200 datasheet

 ..1. Size:42K  fairchild semi

 kse200.pdf pdf_icon

KSE200

KSE200 Feature Low Collector-Emitter Saturation Voltage High Current Gain Bandwidth Product fT=65MHz @ IC=100mA (Min.) Complement to KSE210 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V ... See More ⇒

 ..2. Size:88K  samsung

 kse200.pdf pdf_icon

KSE200

KSE200 POWER TR CD-ROM(Edition.1.1) This Data Sheet is subject to change without notice. (C) 1994 Samsung Electronics Printed in Korea. Page 1 (KSE200) KSE200 POWER TR CD-ROM(Edition.1.1) This Data Sheet is subject to change without notice. (C) 1994 Samsung Electronics Printed in Korea. Page 2 (KSE200) ... See More ⇒

Detailed specifications: KSE13009, KSE13009F, KSE170, KSE171, KSE172, KSE180, KSE181, KSE182, BC547, KSE210, KSE2955T, KSE3055T, KSE340, KSE350, KSE44H-1, KSE44H-10, KSE44H-11

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