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KSE3055T Specs and Replacement


   Type Designator: KSE3055T
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 75 W
   Maximum Collector-Base Voltage |Vcb|: 70 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 2 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO220

 KSE3055T Transistor Equivalent Substitute - Cross-Reference Search

   

KSE3055T detailed specifications

 ..1. Size:38K  fairchild semi
 kse3055t.pdf pdf_icon

KSE3055T

KSE3055T General Purpose and Switching Applications DC Current Gain Specified to IC =10A High Current Gain-Bandwidth Product fT = 2MHz (Min.) TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector -Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-... See More ⇒

Detailed specifications: KSE171 , KSE172 , KSE180 , KSE181 , KSE182 , KSE200 , KSE210 , KSE2955T , BD139 , KSE340 , KSE350 , KSE44H-1 , KSE44H-10 , KSE44H-11 , KSE44H-2 , KSE44H-4 , KSE44H-5 .

Keywords - KSE3055T transistor specs

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