KSP05
Datasheet, Equivalent, Cross Reference Search
Type Designator: KSP05
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.625
W
Maximum Collector-Base Voltage |Vcb|: 60
V
Maximum Collector-Emitter Voltage |Vce|: 60
V
Maximum Emitter-Base Voltage |Veb|: 4
V
Maximum Collector Current |Ic max|: 0.5
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 100
MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package:
TO92
KSP05
Transistor Equivalent Substitute - Cross-Reference Search
KSP05
Datasheet (PDF)
..1. Size:35K fairchild semi
ksp05 ksp06.pdf
KSP05/06Amplifier Transistor Collector-Emitter Voltage: VCEO = KSP05: 60VKSP06: 80V Collector Dissipation: PC (max)=625mW Complement to KSP55/56TO-9211. Emitter 2. Base 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector Base Voltage : KSP05 60 V: KSP06 80 VVCEO Col
..2. Size:45K samsung
ksp05.pdf
KSP05/06 PNP EPITAXIAL SILICON TRANSISTORAMPLIFIER TRANSITORTO-92 Collector-Emitter Voltage: VCEO = KSP05: 60VKSP06: 80V Collector Dissipation: PC(max)=625mWABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector Base Voltage VCBO :KSP05 60 V :KSP06 80 VCollector-Emitter Voltage VCEO :KST05 60 V :KST06 80 VEmitter-Base Voltage VEBO 4 V
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