All Transistors. KSP5172 Datasheet

 

KSP5172 Datasheet and Replacement


   Type Designator: KSP5172
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.625 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 120 MHz
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO92
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KSP5172 Datasheet (PDF)

 8.1. Size:26K  fairchild semi
 ksp5179.pdf pdf_icon

KSP5172

KSP5179High Frequency TransistorTO-9211. Emitter 2. Base 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage 20 VVCEO Collector-Emitter Voltage 12 VVEBO Emitter-Base Voltage 2.5 VIC Collector Current 50 mAPC Collector Power Dissipation (Ta=25C) 200 mWDerate above

 8.2. Size:21K  samsung
 ksp5179.pdf pdf_icon

KSP5172

KSP5179 NPN EPITAXIAL SILICON TRANSISTORHIGH FREQUENCY TRANSISTORTO-92ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO 20 VCollector-Emitter Voltage VCEO 12 VEmitter-Base Voltage VEBO 2.5 VCollector Current IC 50 mACollector Dissipation (TA=25 ) PC 200 mW Derate above 25 1.14 mW/ Collector Dissipation (TC=25 ) mWPC 300 D

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: RN1909 | ZX5T2E6 | BCY71AQ | HBD437T | U2T605 | NTE2547 | BCW20

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