KSR2011F Datasheet. Specs and Replacement

Type Designator: KSR2011F  📄📄 

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in Bias Resistor R1 = 22 kOhm

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 200 MHz

Collector Capacitance (Cc): 5.5 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SOT23

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KSR2011F datasheet

 7.1. Size:20K  samsung

 ksr2011.pdf pdf_icon

KSR2011F

KSR2011 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) TO-92 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=22 ) Complement to KSR1011 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage V... See More ⇒

 8.1. Size:20K  samsung

 ksr2012.pdf pdf_icon

KSR2011F

KSR2012 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) TO-92 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=47 ) Complement to KSR1012 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage V... See More ⇒

 8.2. Size:41K  samsung

 ksr2010.pdf pdf_icon

KSR2011F

KSR2010 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) TO-92 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=10 ) Complement to KSR1010 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage V... See More ⇒

 8.3. Size:22K  samsung

 ksr2013.pdf pdf_icon

KSR2011F

KSR2013 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) TO-92 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=2.2 , R2=47 ) Complement to KSR1013 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base... See More ⇒

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Detailed specifications: KSR2004, KSR2005, KSR2006, KSR2007, KSR2008, KSR2009, KSR2010, KSR2011, 9014, KSR2012, KSR2012F, KSR2101, KSR2102, KSR2103, KSR2104, KSR2105, KSR2106

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