All Transistors. KSR2011F Datasheet

 

KSR2011F Datasheet and Replacement


   Type Designator: KSR2011F
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 22 kOhm
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 5.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT23
 

 KSR2011F Substitution

   - BJT ⓘ Cross-Reference Search

   

KSR2011F Datasheet (PDF)

 7.1. Size:20K  samsung
 ksr2011.pdf pdf_icon

KSR2011F

KSR2011 PNP EPITAXIAL SILICON TRANSISTORSWITCHING APPLICATION (Bias Resistor Built In)TO-92 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=22 ) Complement to KSR1011ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO -40 VCollector-Emitter Voltage VCEO -40 VEmitter-Base Voltage V

 8.1. Size:20K  samsung
 ksr2012.pdf pdf_icon

KSR2011F

KSR2012 PNP EPITAXIAL SILICON TRANSISTORSWITCHING APPLICATION (Bias Resistor Built In)TO-92 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=47 ) Complement to KSR1012ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO -40 VCollector-Emitter Voltage VCEO -40 VEmitter-Base Voltage V

 8.2. Size:41K  samsung
 ksr2010.pdf pdf_icon

KSR2011F

KSR2010 PNP EPITAXIAL SILICON TRANSISTORSWITCHING APPLICATION (Bias Resistor Built In)TO-92 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=10 ) Complement to KSR1010ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO -40 VCollector-Emitter Voltage VCEO -40 VEmitter-Base Voltage V

 8.3. Size:22K  samsung
 ksr2013.pdf pdf_icon

KSR2011F

KSR2013 PNP EPITAXIAL SILICON TRANSISTORSWITCHING APPLICATION (Bias Resistor Built In)TO-92 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=2.2 , R2=47 ) Complement to KSR1013ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO -50 VCollector-Emitter Voltage VCEO -50 VEmitter-Base

SHOW MORE

Datasheet: KSR2004 , KSR2005 , KSR2006 , KSR2007 , KSR2008 , KSR2009 , KSR2010 , KSR2011 , C3198 , KSR2012 , KSR2012F , KSR2101 , KSR2102 , KSR2103 , KSR2104 , KSR2105 , KSR2106 .

History: 2SD2439O

Keywords - KSR2011F transistor datasheet

 KSR2011F cross reference
 KSR2011F equivalent finder
 KSR2011F lookup
 KSR2011F substitution
 KSR2011F replacement

 

 
Back to Top

 


 
.