All Transistors. KST05 Datasheet

 

KST05 Datasheet and Replacement


   Type Designator: KST05
   SMD Transistor Code: 1H
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.35 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: SOT23
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KST05 Datasheet (PDF)

 ..1. Size:44K  fairchild semi
 kst05 kst06.pdf pdf_icon

KST05

KST05/06Driver Transistor Collector-Emitter Voltage: VCEO = KST05: 60V 3KST06: 80V Collector Power Dissipation: PC (max) = 350mW Complement to KST55/56 2SOT-2311. Base 2. Emitter 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collecto-Base Voltage : KST05 60 V: KST06

 ..2. Size:21K  samsung
 kst05.pdf pdf_icon

KST05

KST05/06 NPN EPITAXIAL SILICON TRANSISTORDRIVER TRANSISTORSOT-23ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector Base Voltage VCBO :KST05 60 V :KST06 80 VCollector-Emitter Voltage VCEO :KST05 60 V :KST06 80 VEmitter-Base Voltage VEBO 4 VCollector Current IC 500 mACollector Dissipation PC 350 mWStorage Temperature TSTG 150 Thermal Resi

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History: KT8107D2 | SD451 | 2SC3356W | UN9217R | 2N1056 | 2SC999A | ECG2306

Keywords - KST05 transistor datasheet

 KST05 cross reference
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