KST05 Specs and Replacement
Type Designator: KST05
SMD Transistor Code: 1H
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.35 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Package: SOT23
KST05 Substitution
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KST05 datasheet
KST05/06 Driver Transistor Collector-Emitter Voltage VCEO = KST05 60V 3 KST06 80V Collector Power Dissipation PC (max) = 350mW Complement to KST55/56 2 SOT-23 1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collecto-Base Voltage KST05 60 V KST06 ... See More ⇒
KST05/06 NPN EPITAXIAL SILICON TRANSISTOR DRIVER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector Base Voltage VCBO KST05 60 V KST06 80 V Collector-Emitter Voltage VCEO KST05 60 V KST06 80 V Emitter-Base Voltage VEBO 4 V Collector Current IC 500 mA Collector Dissipation PC 350 mW Storage Temperature TSTG 150 Thermal Resi... See More ⇒
Detailed specifications: KSR2107, KSR2108, KSR2109, KSR2110, KSR2111, KSR2112, KSR2113, KSR2114, TIP2955, KST06, KST10, KST1009F1, KST1009F2, KST1009F3, KST1009F4, KST1009F5, KST13
Keywords - KST05 pdf specs
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History: 3DD3020A4 | FTA1663 | HSE174 | 2SA772-2
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