KST13 Datasheet, Equivalent, Cross Reference Search
Type Designator: KST13
SMD Transistor Code: 1M
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.35 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 125 MHz
Forward Current Transfer Ratio (hFE), MIN: 5000
Noise Figure, dB: -
Package: SOT23
KST13 Transistor Equivalent Substitute - Cross-Reference Search
KST13 Datasheet (PDF)
kst13.pdf
KST13/14Darlington Amplifier Transistor32SOT-2311. Base 2. Emitter 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage 30 VVCES Collector-Emitter Voltage 30 VVEBO Emitter-Base Voltage 10 VIC Collector Current 300 mAPC Collector Power Dissipation 350 mWTSTG Stora
kst13.pdf
KST13/14 NPN EPITAXIAL SILICON TRANSISTORDARLINGTON AMPLIFIER TRANSISTORSOT-23ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO 30 VCollector-Emitter Voltage VCES 30 VEmitter-Base Voltage VEBO 10 VCollector Current IC 300 mACollector Dissipation PC 350 mWStorage Temperature TSTG 150 1. Base 2. Emitter 3. CollectorELECTRICAL
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
