KST812M3 Datasheet. Specs and Replacement

Type Designator: KST812M3  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.35 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO236

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KST812M3 datasheet

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KST812M3

KST812M7 S/S TR CD-ROM(Edition.1.1) This Data Sheet is subject to change without notice. (C) 1994 Samsung Electronics Printed in Korea. Page 1 (KST812M7) ... See More ⇒

Detailed specifications: KST5089, KST5179, KST55, KST5550, KST56, KST63, KST64, KST6428, S8050, KST812M4, KST812M5, KST812M6, KST812M7, KST812M8, KST92, KST93, KSY34

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