KT316DM Datasheet. Specs and Replacement
Type Designator: KT316DM 📄📄
SMD Transistor Code: КТ316ДМ
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 10 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 800 MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
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KT316DM Substitution
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KT316DM datasheet
Detailed specifications: KT3168A-9, KT3169A-9, KT3169A9-1, KT316A, KT316AM, KT316B, KT316BM, KT316D, BC549, KT316G, KT316GM, KT316V, KT316VM, KT3170A-9, KT3171A-9, KT3172A-9, KT3173A-9
Keywords - KT316DM pdf specs
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BJT Parameters and How They Relate
History: KT343B
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