KT502E Datasheet. Specs and Replacement

Type Designator: KT502E  📄📄 

SMD Transistor Code: КТ502Е

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.35 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 20 V

Maximum Collector Current |Ic max|: 0.15 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 5 MHz

Collector Capacitance (Cc): 50 pF

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

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KT502E datasheet

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KT502E

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Detailed specifications: KT501J, KT501K, KT501L, KT501M, KT501V, KT502A, KT502B, KT502D, TIP2955, KT502G, KT502V, KT503A, KT503B, KT503D, KT503E, KT503G, KT503V

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