KT635B Datasheet. Specs and Replacement
Type Designator: KT635B 📄📄
SMD Transistor Code: КТ635Б
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
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KT635B datasheet
Detailed specifications: KT630V, KT632B, KT632B-1, KT633A, KT633B, KT634A-2, KT634B-2, KT635A, TIP122, KT637A-2, KT637B-2, KT638A, KT639A, KT639A1, KT639B, KT639B1, KT639D
Keywords - KT635B pdf specs
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BJT Parameters and How They Relate
History: KRC852E | RN1503 | KT8297G | 2SD2213 | 2SC3973A | KRC402V | PBRN123YK
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