KT660B Datasheet. Specs and Replacement

Type Designator: KT660B  📄📄 

SMD Transistor Code: КТ660Б

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.5 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.8 A

Max. Operating Junction Temperature (Tj): 180 °C

Electrical Characteristics

Transition Frequency (ft): 200 MHz

Collector Capacitance (Cc): 10 pF

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

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KT660B datasheet

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Detailed specifications: KT646B, KT647A-2, KT648A-2, KT657A-2, KT657B-2, KT657V-2, KT659A, KT660A, 9014, KT661A, KT662A, KT664A9, KT664B9, KT665A9, KT665B9, KT666A9, KT667A9

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