KT665B9 Datasheet. Specs and Replacement

Type Designator: KT665B9  📄📄 

SMD Transistor Code: КТ665Б9

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 140 MHz

Collector Capacitance (Cc): 25 pF

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

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KT665B9 datasheet

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Detailed specifications: KT659A, KT660A, KT660B, KT661A, KT662A, KT664A9, KT664B9, KT665A9, S9013, KT666A9, KT667A9, KT668A, KT668B, KT668V, KT671A-2, KT680A, KT681A

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